首页 >2N4403(D26Z)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPGeneralPurposeAmplifier | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPGENERALPURPOSESWITCHINGTRANSISTOR VOLTAGE40VPOWER625mW FEATURES PNPepitaxialsilicon,planardesign Collector-emittervoltageVCE=-40V CollectorcurrentIC=-600mA Complimentary(NPN)device:2N4401 MECHANICALDATA Case:TO-92 Terminals:SolderableperMIL-STD-202,Method208 ApproxWeight:0.02 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
PNPGeneralPurposeAmplifier | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralPurposeTransistorsPNPSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistors PNPsiliconplanarepitaxialtransistor Collector−EmitterVoltageVCEO40Vdc Collector−BaseVoltageVCBO40Vdc Emitter−BaseVoltageVEBO5.0Vdc CollectorCurrent−ContinuousIC600mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Plastic-EncapsulateMOSFET FEATURES Powerdissipation | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
GeneralPurposeTransistors PNPsiliconplanarepitaxialtransistor Collector−EmitterVoltageVCEO40Vdc Collector−BaseVoltageVCBO40Vdc Emitter−BaseVoltageVEBO5.0Vdc CollectorCurrent−ContinuousIC600mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistors PNPsiliconplanarepitaxialtransistor Collector−EmitterVoltageVCEO40Vdc Collector−BaseVoltageVCBO40Vdc Emitter−BaseVoltageVEBO5.0Vdc CollectorCurrent−ContinuousIC600mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistorsPNPSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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