首页 >2N4401其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SmallSignalGeneralPurposeAmplifiers&Switchs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
LowPowerBipolarTransistors | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
NPNGENERALPURPOSEAMPLIFIER ■DESCRIPTION TheUTC2N4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNGeneralPurposeAmplifier Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof600mWattsofPowerDissipation •ThroughHolePackage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:Typenumber | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
NPNGENERALPURPOSEAMPLIFIER | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNEPITAXIALPLANARTRANSISTOR Description The2N4401isdesignedforgeneralpurposeswitchingandamplifierapplications. Features •Complementaryto2N4403. •HighPowerDissipation:625mWat25°C •HighDCCurrentGain:100-300at150mA •HighBreakdownVoltage:40VMin. | TGS Tiger Electronic Co.,Ltd | TGS | ||
NPN通用放大器 | ETC | |||
GeneralPurposeSi-EpitaxialPlanarTransistors Si-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
TO-92Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
Si-EpitaxialPlanarTransistors Si-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | Diotec |
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