首页 >2N3906S-RTK/R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposeamplifierandswitchingapplicationsatcollectorcurrentsof10mAto100mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralPurposeTransistorsPNPSilicon | FS First Silicon Co., Ltd | FS | ||
EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ●LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. ●ExcellentDCCurrentGainLinearity. ●LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. ●LowCollector | KECKEC CORPORATION KEC株式会社 | KEC | ||
USMPACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
VSMPACKAGE GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance | KECKEC CORPORATION KEC株式会社 | KEC | ||
TheG2N3906isdesignedforgeneralpurposeswitchingandamplifierapplications | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL |
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