首页 >2N3906BU其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=-50nA(Max.),IBL=-50nA(Max.) @VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacita | KECKEC CORPORATION KEC株式会社 | KEC | ||
TO-92PACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARPNPTRANSISTOR GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent:ICEX=-50nA(Max.),IBL=-50nA(Max.)@VCE=-30V,VEB=-3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage:VCE(sat)=-0.4V(Max.)@IC=-50mA,IB=-5mA. •LowCollectorOutputCapacitance:Cob=4.5pF | KECKEC CORPORATION KEC株式会社 | KEC | ||
GeneralPurposeTransistors | FS First Silicon Co., Ltd | FS | ||
SiliconPNPtransistorinaTO-92PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
GeneralPurposeTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistorsPNPSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposetransistor Features -PNPsiliconepitaxialplanartransistorforswitchingandamplifierapplication. -Ascomplementarytype,theNPNtransistor2N3904-Gisrecommended. -ThistransistorisavailableintheSOT-23casewiththetypedesignationMMBT3906-G. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
GeneralPurposeTransistor Features -PNPsiliconepitaxialplanartransistorfor switchingandamplifierapplications. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP |
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