2N3439L数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This family of 2N3439 through 2N3440, high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) ,no suffix, a TO-205AA (TO-5), L suffix and a low profile surfacemount U4 and UA packaging. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

特性 Features

JEDEC registered 2N3439 through 2N3440 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368
RoHS compliant versions available (commercial grade only)
VCE(sat) = 0.5 V @ IC = 50 mA
Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA
Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA
General purpose transistors for medium power applications requiring high frequency switching and low package profile
Military and other high-reliability applications

简介

2N3439L属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N3439L晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。