SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.

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CENTRAL

Bipolar Transistor

Description: A Silicon NPN transistor in a TO-39 case intended for high speed switching applications. Description Bipolar Transistor

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MULTICOMP

易络盟

Small Signal Transistors

Small Signal Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2218ALJ) • JANTX level (2N2218ALJX) • JANTXV level (2N2218ALJV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation tes

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SEMICOA

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching • DC and VHF/UHF amplification, for 2N2219 only.

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PHI

PHI

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER

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CENTRAL

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

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SEMICOA

SWITCHING SILICON TRANSISTORS

SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case. They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance t

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COMSET

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 30V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 1.6V(Max) @IC= 0.5A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

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ISC

无锡固电