SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

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SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

文件：44.34 Kbytes 页数：2 Pages

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SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

文件：44.34 Kbytes 页数：2 Pages

MICROSEMI

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SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

文件：44.34 Kbytes 页数：2 Pages

MICROSEMI

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SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

文件：44.34 Kbytes 页数：2 Pages

MICROSEMI

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SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

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丝印：1P；Package：SC-89；General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requirement

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FS

Hi-Rel 40 V - 0.8 A NPN transistor

Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for

文件：429.52 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON SWITCHING TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

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NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

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