NPN Switching Transistors

Features • High current (max.800mA) • Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information)

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MCC

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

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SEMICOA

Low Power Bipolar Transistor

Features • NPN Silicon Planar Switching Transistor • Switching and Linear application DC and VHF Amplifier applications

文件：217.01 Kbytes 页数：2 Pages

MULTICOMP

易络盟

the transistor is subdivded into one group

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

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SURGE

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

文件：187.78 Kbytes 页数：3 Pages

COMSET

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A . Compliance to RoHS

文件：157.67 Kbytes 页数：3 Pages

COMSET

SWITCHING SILICON TRANSISTORS

SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance

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COMSET

Complement to Type 2N2907

DESCRIPTION • Collector Current- IC= 0.8A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) • Complement to Type 2N2907 APPLICATIONS • Designed for general-purpose switching and linear amplification.

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ISC

无锡固电

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

文件：301.5 Kbytes 页数：4 Pages

MICRO-ELECTRONICS

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

文件：130.18 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司