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MLD2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET62VOLTS(CLAMPED)RDS(on)=0.4OHMS TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivef

MotorolaMotorola, Inc

摩托罗拉

MLD2N06CL

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLD2N06CLG

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

MotorolaMotorola, Inc

摩托罗拉

MLP2N06CLG

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N06V

DUALTMOSMOSFET3.3AMPERES60VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MotorolaMotorola, Inc

摩托罗拉

MMDF2N06VL

DUALTMOSMOSFET2.5AMPERES60VOLTS

TMOSV™SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MotorolaMotorola, Inc

摩托罗拉

MTDF2N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFL2N06L

2A,60V,0.950Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFL2N06LN-channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.T

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFW2N06RLE

2A,60V,0.160Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFW2N06RLEN-Channel,logiclevel,ESDprotected,powerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.TheRFW2N06RLEwasdesigned

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

STN2N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
Infineon
17+
TO-220
6200
询价
infineon
0442+
TO-263
900
询价
Infineon
2339+
TO263
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
INFINEON
03/04+
TO263
420
全新原装100真实现货供应
询价
INFINEON
23+
TO-263
1018
全新原装现货
询价
VB
2019
PG-TO220-3-1
55000
绝对原装正品假一罚十!
询价
INFINEON
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
INFINEON
2023+
TO263
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
INFINEON
21+
TO263
35210
一级代理/放心采购
询价
Infineon
2021+
TO263
6540
原装现货/欢迎来电咨询
询价
更多2N06G供应商 更新时间2024-6-18 16:00:00