KMBT2907AT

Marking：2F；Package：SOT-523；PNP Transistors

■Features ●SmallPackage ●ComplementarytoMMBT2222AT

KST2907A

Marking：2F；Package：SOT-23；General Purpose Transistor

GeneralPurposeTransistor

MM3Z15

Marking：2F；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MMBT2907A

Marking：2F；Package：SOT-23；General Purpose Transistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT-23packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequiremen

MMBT2907A

Marking：2F；Package：SOT-23；Epitaxial planar die construction

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableMMBT2222A. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifierandswitching. ●Theusefuldynamicrangeextendsto600mAasaswitchand

MMBT2907A

Marking：2F；Package：TO-236AB；NPN Silicon

PNPSilicon

MMBT2907A

Marking：2F；Package：SOT-23；Plastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction ComplementaryNPNTypeavailable(MMBT2222A)

MMBT2907A

Marking：2F；Package：SOT-23；PNP General Purpose Amplifier

FEATURES ●Epitaxialplanardieconstruction.PbLead-free ●ComplementaryNPNtypeavailableMMBT2222A. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifierandswitching. ●Theusefuldynamicrangeextends

MMBT2907A

Marking：2F；Package：SOT-23；PNP Transistors

Features ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMBT2222A)

MMBT2907AT

Marking：2F；Package：SOT-523；PNP Transistors

■Features ●SmallPackage ●ComplementarytoMMBT2222AT