2ED3140MC12L中文资料英飞凌数据手册PDF规格书

特性 Features

• Dual-channel isolated gate driver

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to 6.5 A typical peak output current

• 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew)

• 35 V absolute maximum output supply voltage

• High common-mode transient immunity CMTI > 200 kV/μs

• Active shutdown and short circuit clamping

• Galvanically isolated coreless transformer gate driver

• 3.3 V and 5 V input supply voltage

• 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance

• Safety certification

- UL 1577 (File 311313) with VISO,test = 6840 V (rms) for 1 s, VISO = 5700 V (rms) for 60 s

- Reinforced insulation according to IEC 60747-17 (planned) with VIORM = 1767 V (peak)