2ED1322S12M中文资料英飞凌数据手册PDF规格书

特性 Features

 Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

Floating

channel designed for bootstrap operation

 Maximum bootstrap voltage (VB node) of + 1225 V

 Operating voltages (VS node) upto + 1200 V

 Negative VS transient voltage immunity of 100 V

With

repetitive 700 ns pulses

 2.3 A / 2.3 A peak output source / sink current capability

 Integrated ultra-fast over-current protection (OCP)

±

5% high accuracy reference threshold

Less

than 1 us over-current sense to output shutdown

 Integrated Active Miller Clamp (AMC) with 2 A sink current capability

 Integrated Short Circuit Clamp (SCC) function

 Integrated ultra-fast, low resistance bootstrap diode

 Integrated dead-time and shoot-through prevention logic (2ED1324S12P)

 Enable, Fault, and programmable Fault clear RFE input

 Logic operational up to –8 V on VS Pin

 Independent per channel undervoltage lockout (UVLO)

 25 V VCC supply voltage (maximum)

 Separate Logic (VSS) and output ground (COM)

 Greater than 5 mm clearance / creepage

 2 kV HBM ESD capability