丝印：2ED；Package：DFN2020-6S；N-Channel 20V (D-S) MOSFET , ESD Protection

文件：659.22 Kbytes 页数：6 Pages

LRC

乐山无线电

丝印：2ED；Package：SOT23(TO-236)；N-Channel 20V (D-S) MOSFET Low Gate Threshold Voltage

文件：564.75 Kbytes 页数：3 Pages

LRC

乐山无线电

丝印：2ED；Package：SOT23(TO-236)；N-Channel 20V (D-S) MOSFET Low Gate Threshold Voltage

文件：564.75 Kbytes 页数：3 Pages

LRC

乐山无线电

丝印：2ED2410-EM；Package：PG-TSDSO-24；12 V/24 V smart analog high-side MOSFET gate driver

Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element according to ISO 26262:2018 Clause 8-13 • One channel device with two high-side gate driver outputs • 3 Ω pull-down, 50 Ω pull-up for fast switch on/off • Support back-to-back MOSFET topologies

文件：5.92652 Mbytes 页数：49 Pages

Infineon

英飞凌

丝印：2ED4820-EM；Package：PG-TSDSO-24；48 V smart high-side MOSFET gate driver with SPI

Features • Extended supply voltage range: 20 - 70 V • Two independent high-side gate driver outputs • 1 A pull down, 0.3 A pull up for fast switch off/on • Device control, configuration and diagnostic via SPI • Low supply current in sleep mode IBAT_Q

文件：1.2038 Mbytes 页数：45 Pages

Infineon

英飞凌

丝印：2EDL8033G3；Package：PG-VSON-10-4；120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased rob

文件：1.53693 Mbytes 页数：32 Pages

Infineon

英飞凌

丝印：2ED8033G4B；Package：PG-VDSON-8-5；120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased rob

文件：1.53693 Mbytes 页数：32 Pages

Infineon

英飞凌

丝印：2ED8033G4C；Package：PG-VDSON-10-2；120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased rob

文件：1.53693 Mbytes 页数：32 Pages

Infineon

英飞凌

丝印：2EDL8034G3；Package：PG-VSON-10-4；120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased rob

文件：1.53693 Mbytes 页数：32 Pages

Infineon

英飞凌

丝印：2ED8034G4B；Package：PG-VDSON-8-5；120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased rob

文件：1.53693 Mbytes 页数：32 Pages

Infineon

英飞凌