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29F040B

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

29F040

4Mbit512Kbx8,UniformBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F040isanon-volatilememorythatmaybeerasedelectricallyattheblocklevel,andprogrammedByte-by-Byte. ■M29F040isreplacedbytheM29F040B ■5V±10SUPPLYVOLTAGEforPROGRAM, ERASEandREADOPERATIONS ■FASTACCESSTIME:70ns ■BYTEPROGRAMMINGTIME:1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

29F040

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F040

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AM29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AS29F040

512Kx8FLASHUNIFORMSECTOR5.0VFLASHMEMORY

GENERALDESCRIPTION TheAS29F040isa4Mbit,5.0Volt-onlyFLASHmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0-DQ7.Thedeviceisdesignedtobeprogrammed

AUSTIN

AUSTIN

AS29F040

Sectorprotection

GENERALDESCRIPTION TheAS29F040isa4Mbit,5.0Volt-onlyFLASHmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0-DQ7.Thedeviceisdesignedtobeprogrammed

MICROSS

MICROSS

AS29F040

5V512Kx8CMOSFLASHEEPROM

Functionaldescription TheAS29F040isa4-megabit,5-volt-onlyFlashmemorydeviceorganizedas512Kbytesof8bitseach.Forflexibleeraseanprogramcapability,the4megabitsofdataisdividedintoeight64K-bytesectors.The×8dataappearsonDQ0–DQ7.TheAS29F040isofferedinJEDECsta

ALSC

Alliance Semiconductor Corporation

BM29F040

4M(512KX8)BIT

■GENERALDESCRIPTION TheMBM29F040Cisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheMBM29F040Cisofferedina32-pinPLCCand32-pinTSOP(I)package.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisno

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

EN29F040

4Megabit(512Kx8-bit)FlashMemory

[EON] GENERALDESCRIPTION TheEN29F040isa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040

ETCList of Unclassifed Manufacturers

未分类制造商

EN29F040A

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

FT29F040B

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

FORCE

Force Technologies Ltd

HY29F040A

512Kx8-bitCMOS5.0volt-only,SectorEraseFlashMemory

HynixHynix Semiconductor

SK海力士海力士半导体

M29F040

4Mbit512Kbx8,UniformBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F040isanon-volatilememorythatmaybeerasedelectricallyattheblocklevel,andprogrammedByte-by-Byte. ■M29F040isreplacedbytheM29F040B ■5V±10SUPPLYVOLTAGEforPROGRAM, ERASEandREADOPERATIONS ■FASTACCESSTIME:70ns ■BYTEPROGRAMMINGTIME:1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F040B

4Mbit(512Kbx8,UniformBlock)SingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29F040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F040B

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F040B

4Mbit(512Kbx8,UniformBlock)SingleSupplyFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29F040B

4Mbit(512Kbx8,UniformBlock)SingleSupplyFlashMemory

SUMMARYDESCRIPTION TheM29F040Bisa4Mbit(512Kbx8)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM29F040B

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MBM29F040C

FLASHMEMORY4M(512Kx8)BIT

■GENERALDESCRIPTION TheMBM29F040Cisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheMBM29F040Cisofferedina32-pinPLCCand32-pinTSOP(I)package.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisno

spansionSPANSION

飞索飞索半导体

MBM29F040C

4M(512KX8)BIT

■GENERALDESCRIPTION TheMBM29F040Cisa4M-bit,5.0V-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheMBM29F040Cisofferedina32-pinPLCCand32-pinTSOP(I)package.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisno

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

供应商型号品牌批号封装库存备注价格
SMD
2021+
PLCC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
1625+
10000
要原装货就来电话,散新请绕道!
询价
AMD
1315
PLCC
1739
就找我吧!--邀您体验愉快问购元件!
询价
FUJ
23+
SOP
3000
原装正品假一罚百!可开增票!
询价
AMD
2122+
PLCC
9880
全新原装正品现货,优势渠道可含税,假一赔十
询价
ST/意法
22+
SOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
AMD
22+
PLCC
9880
原装正品
询价
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
23+
N/A
45980
正品授权货源可靠
询价
2021+
6540
原装现货/欢迎来电咨询
询价
更多29F040B供应商 更新时间2024-5-17 15:00:00