299x

Laser & detector chip & TO-can products

AN299

EXTERNAL32.768KHZCRYSTALOSCILLATOR

BA299

512MbC-dieNORFLASH

GENERALDESCRIPTION TheK8A(10/11/12/13)15Efeaturingsingle1.8Vpowersupplyisa512MbitMuxedBurstMultiBankFlashMemoryorganizedas32Mx16.Thememoryarchitectureofthedeviceisdesignedtodivideitsmemoryarraysinto512blocks(Uniformblockpart)/515blocks(Bootblockpart)withind

BAS299

HIGHSPEEDHIGHCURRENTQUADSWITCHINGDIODE

Features •High-SwitchingSpeed,HighCurrent •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

BF299

NPNHIGHVOLTAGEVIDEOAMPLIFIERS

BSH299

P-channelenhancementmodeMOStransistor

DESCRIPTION P-channelenhancementmodeMOStransistorinaSOT363SMDpackage. FEATURES •Lowthresholdvoltage •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTL,etc. APPLICATIONS •Powermanagement •Batterypoweredapplicationse.g.cellularphones •Gen

BSP299

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeAvalancherated)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V

BSP299

SIPMOSSmall-SignalTransistor

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

BSP299

SIPMOSSmall-SignalTransistor

BY299

Fastsiliconrectifierdiodes

ForwardCurrent:2A ReverseVoltage:100to800V Features •Max.soldertemperture:260°C •PlasticmeterialhasULclassification94V-0