256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

文件：493.47 Kbytes 页数：35 Pages

AMD

超威半导体

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r

文件：456.67 Kbytes 页数：35 Pages

AMD

超威半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

256K(32K x8, Chip Erase)FLASH MEMORY

文件：715.28 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

ST

意法半导体

StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

文件：1.69919 Mbytes 页数：106 Pages

Intel

英特尔

StrataFlash Wireless Memory

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and

文件：1.70781 Mbytes 页数：106 Pages

NUMONYX

StrataFlash짰 Wireless Memory

■ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Bu

文件：1.66375 Mbytes 页数：102 Pages

NUMONYX

1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30)

The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta

文件：1.40425 Mbytes 页数：100 Pages

Intel

英特尔

Numonyx™ StrataFlash Wireless Memory (L18)

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and d

Micron

美光