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28F256	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
28F256	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
28F256	文件：493.47 Kbytes Page：35 Pages	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory GENERALDESCRIPTION TheAm28F256isa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenonvolatilerandomaccessmemory.TheAm28F256ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtoberepr	AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司	AMD
28F256	文件：456.67 Kbytes Page：35 Pages	256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms GENERALDESCRIPTION TheAm28F256Aisa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F256Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtober	AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司	AMD
28F256L18	文件：1.69919 Mbytes Page：106 Pages	StrataFlash Wireless Memory TheIntelStrataFlash®wirelessmemory(L18)deviceisthelatestgenerationofIntelStrataFlash®memorydevicesfeaturingflexible,multiple-partition,dualoperation.Itprovideshighperformancesynchronous-burstreadmodeandasynchronousreadmodeusing1.8Vlowvoltage,multi-levelcell(M	IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司）	Intel
28F256L18	文件：1.70781 Mbytes Page：106 Pages	StrataFlash Wireless Memory TheNumonyx™StrataFlash®WirelessMemory(L18)providesread-while-writeandread-while-erasecapabilitywithdensityupgradesthrough256-Mbit.Thisfamilyofdevicesprovideshighperformanceatlowvoltageona16-bitdatabus.Individuallyerasablememoryblocksaresizedforoptimumcodeand	NUMONYXNUMONYX 恒忆	NUMONYX
28F256L30	文件：1.40425 Mbytes Page：100 Pages	1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30) The1.8VoltIntelStrataFlash®wirelessmemorywith3-VoltI/OproductisthelatestgenerationofIntelStrataFlash®memorydevicesfeaturingflexible,multiple-partition,dualoperation.Itprovideshighperformancesynchronous-burstreadmodeandasynchronousreadmodeusing1.8voltlow-volta	IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司）	Intel
28F256L30	文件：1.66375 Mbytes Page：102 Pages	StrataFlash짰 Wireless Memory ■HighperformanceRead-While-Write/Erase —85nsinitialaccess —52MHzwithzerowaitstate,17nsclock-to-dataoutputsynchronous-burstmode —25nsasynchronous-pagemode —4-,8-,16-,andcontinuous-wordburstmode —Burstsuspend —ProgrammableWAITconfiguration —Bu	NUMONYXNUMONYX 恒忆	NUMONYX
AM28F256	文件：493.47 Kbytes Page：35 Pages	256Kilobit(32Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory GENERALDESCRIPTION TheAm28F256isa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenonvolatilerandomaccessmemory.TheAm28F256ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtoberepr	AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司	AMD
AM28F256A	文件：456.67 Kbytes Page：35 Pages	256Kilobit(32Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms GENERALDESCRIPTION TheAm28F256Aisa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F256Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtober	AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司	AMD
M28F256	文件：715.28 Kbytes Page：20 Pages	256K(32Kx8,ChipErase)FLASHMEMORY	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
MCM28F256ACH	文件：400.69 Kbytes Page：14 Pages	256-Mbit(32-Mbitx8,16-Mbitx16)FlashMemoryModulewithInternalDecodingandBoundaryScanI/OBuffers	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
UT28F256	文件：69.4 Kbytes Page：11 Pages	Radiation-Hardened32Kx8PROM PRODUCTDESCRIPTION TheUT28F256amorphoussiliconanti-fusePROMisahighperformance,asynchronous,radiation-hardened, 32Kx8programmablememorydevice.TheUT28F256PROMfeaturesfullyasychronousoperationrequiringnoexternalclocksortimingstrobes.Anadvancedradiation-hardened	AEROFLEX AEROFLEX	AEROFLEX

详细参数

型号：
28F256
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	28F256	(FLASH)	23+	DIP	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	28F256	N/A	2339+	PLCC	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市福田区亿兴成电子商行	28F256			大内存	5000		询价
深圳市昊创电子有限公司	28F256	INTEL	1824+	DIP32	1000	原装现货专业代理,可以代拷程序	询价
深圳市维尔达电子有限公司	28F256		2023+	BagPLCC	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市科思奇电子科技有限公司	28F256		22+	BagPLCC	360000	进口原装房间现货实库实数	询价
深圳市永贝尔科技有限公司	28F256	AMD	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市芯诚实创科技有限公司	28F256	INTEL/AMD	2022	DIP	98885	全新原装现货	询价
深圳市航宇科工半导体有限公司	28F256	INTEL	21+	DIP32	1000	原装现货	询价
深圳市创新迹电子有限公司	28F256	I	22+	DIP32	25000	只有原装原装,支持BOM配单	询价

更多28F256供应商更新时间2024-5-16 15:36:00

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