首页>28F256L18>规格书详情

28F256L18中文资料Numonyx™ StrataFlash Wireless Memory (L18)数据手册Micron规格书

PDF无图
厂商型号

28F256L18

功能描述

Numonyx™ StrataFlash Wireless Memory (L18)

制造商

Micron Micron Technology

中文名称

美光 美光科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-25 23:01:00

人工找货

28F256L18价格和库存,欢迎联系客服免费人工找货

28F256L18规格书详情

描述 Description

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.■ High performance Read-While-Write/Erase
  — 85 ns initial access
  — 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
  — 25 ns asynchronous-page mode
  — 4-, 8-, 16-, and continuous-word burst mode
  — Burst suspend
  — Programmable WAIT configuration
  — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
  — 1.8 V low-power buffered programming at 7 µs/byte (Typ)
■ Architecture
  — Asymmetrically-blocked architecture
  — Multiple 8-Mbit partitions: 128-Mbit devices
  — Multiple 16-Mbit partitions: 256-Mbit devices
  — Four 16-Kword parameter blocks: top or bottom configurations
  — 64-Kword main blocks
  — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
  — Status Register for partition and device status
■ Power
  — VCC (core) = 1.7 V - 2.0 V
  — VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
  — Standby current: 30 µA (Typ) for 256-Mbit
  — 4-Word synchronous read current: 15 mA (Typ) at 54 MHz
  — Automatic Power Savings mode
■ Security
  — OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits
  — Absolute write protection: VPP = GND
  — Power-transition erase/program lockout
  — Individual zero-latency block locking
  — Individual block lock-down
■ Software
  — 20 µs (Typ) program suspend
  — 20 µs (Typ) erase suspend
  — Numonyx® Flash Data Integrator optimized
  — Basic Command Set (BCS) and Extended Command Set (ECS) compatible
  — Common Flash Interface (CFI) capable
■ Quality and Reliability
  — Expanded temperature: –25° C to +85° C
  — Minimum 100,000 erase cycles per block
  — Intel ETOX* VIII process technology (0.13 µm)
■ Density and Packaging
  — 128- and 256-Mbit density in VF BGA packages
  — 128/0 and 256/0 density in SCSP
  — 16-bit wide data bus

技术参数

  • 型号:

    28F256L18

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    StrataFlash Wireless Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
N/A
24+
NA/
26
优势代理渠道,原装正品,可全系列订货开增值税票
询价
INTEL/英特尔
25+
BGA
996880
只做原装,欢迎来电资询
询价
INTEL
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
UTMC
三年内
1983
只做原装正品
询价
INTEL/英特尔
23+
BGA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
AMD/INT
1824+
BGA64
2000
原装现货专业代理,可以代拷程序
询价
INTEL
24+
BGA
35200
一级代理分销/放心采购
询价
INTEL
25+23+
BGA
36823
绝对原装正品全新进口深圳现货
询价
intel
24+
BGA
6980
原装现货,可开13%税票
询价
INTEL
2001
BGA
405
原装现货海量库存欢迎咨询
询价