28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

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Intel

英特尔

2048K (256K x 8) CMOS FLASH MEMORY

Intel

英特尔

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

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AMD

超威半导体

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

The Am28F020A is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and e

文件：470.07 Kbytes 页数：35 Pages

AMD

超威半导体

2 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F020 is a high speed 256K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast Re

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