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A28F010

1024K(128Kx8)CMOSFLASHMEMORY

IntelIntel Corporation

英特尔

AM28F010

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F010isa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

AM28F010A

1Megabit(128Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms

GENERALDESCRIPTION TheAm28F010Aisa1MegabitFlashmemoryorganizedas128Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F010Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedt

AMDAdvanced Micro Devices

超威半导体美国超威半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fast

Catalyst

Catalyst Semiconductor

CAT28F010

1MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F010isahighspeed128Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

CAT28F010

1MegabitCMOSFlashMemory

Catalyst

Catalyst Semiconductor

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