丝印：280；Package：TO-94；Smart Two-Phase DC Fan

文件：295.33 Kbytes 页数：9 Pages

SDC

光大芯业

丝印：280N60E1；Package：PJMF280N60E1；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 280mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals:

文件：506.03 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：280N65E1；Package：ITO-220AB-F；650V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 280mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: ITO-220AB-F package  Terminals:

文件：518.08 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：280N10LS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：707.27 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：2800EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：2800EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：2801EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：2801EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：2801EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：2801EP；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器