丝印：27N；WE-KI SMT Wire Wound Ceramic

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.94 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：27N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.47 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：27N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.08 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

文件：768.71 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Fast Switching

文件：65.04 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching

文件：65.06 Kbytes 页数：2 Pages

ISC

无锡固电

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel 30-V (D-S) MOSFET

文件：1.01533 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

包装：散装 类别：工具 刀，切割工具 描述：SHEAR,IND,DRESS,BENT,INLAID

ATG

丝印：27N03S；Package：TDSON-8；OptiMOS짰2 Power-Transistor

文件：371.96 Kbytes 页数：10 Pages

INFINEON

英飞凌