丝印：27N；WE-KI SMT Wire Wound Ceramic

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.94 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：27N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.47 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：27N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.08 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：27N03S；Package：TDSON-8；OptiMOS짰2 Power-Transistor

文件：371.96 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：27N03S；Package：TDSON-8；OptiMOS2 Power-Transistor

文件：379.18 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：27N60M2EP；Package：TO-220FP；N-channel 600 V, 0.150 廓 typ., 20 A MDmesh??M2 EP Power MOSFET in TO-220FP package

文件：665.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

文件：768.71 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fast Switching

文件：65.04 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching

文件：65.06 Kbytes 页数：2 Pages

ISC

无锡固电

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司