ZR25D01

Marking：25R；Package：SOT-23；PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE

APL5325BI-TRL

Marking：25R*；Package：SOT-25；Adjustable Low Dropout 300mA Linear Regulator

GeneralDescription TheAPL5325isaP-channellowdropoutlinearregulatorwhichneedsonlyoneinputvoltagefrom3to6V,anddeliverscurrentupto300mAtosetoutputvoltage.ItalsocanworkwithlowESRceramiccapacitorsandisidealforusinginthebattery-poweredapplicationssucha

MMD25R210RZRH

Marking：25R210RZ；Package：TO-252；250V 0.21Ω N-channel MOSFET

Description MMD25R210RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusingoptimized chargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIan

MMP25R210RZTH

Marking：25R210RZ；Package：TO-220；250V 0.21Ω N-channel MOSFET

Description MMP25R210RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusingoptimized chargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIan

PSMN025-100HS

Marking：25RS10H；Package：LFPAK56D；N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •HighpeakdraincurrentIDM •CopperclipandflexibleLeads •HighoperatingjunctiontemperatureTj=175°C •Superiorreliability •Low

W25R256JVEIQ

Marking：25R256JVEQ；Package：WSON-8；3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & RPMC

1.GENERALDESCRIPTIONS TheW25R256JV(256M-bit)SerialFlashmemoryprovidesastoragesolutionforsystemswithlimited space,pinsandpower.TheW25RseriesoffersflexibilityandperformancewellbeyondordinarySerial Flashdevices.TheyareidealforcodeshadowingtoRAM,executingcode

REF4132B30DBVRQ1

Marking：25RC；Package：SOT-23；REF4132-Q1 Low-Drift, Low-Power, Small-Footprint Series Voltage Reference