丝印：258A；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：258A；Package：SO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：258A；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：258A；Package：TSSOP8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：258A；Package：TSSOP-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：258AM；Package：SOIC；DUAL OPERATIONAL AMPLIFIERS

FEATURES · Controlled Baseline – One Assembly/One Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Wide Supply Range: – Si

文件：390.88 Kbytes 页数：13 Pages

TI

德州仪器

丝印：258AM；Package：SOIC；DUAL OPERATIONAL AMPLIFIERS

FEATURES · Controlled Baseline – One Assembly/One Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Wide Supply Range: – Si

文件：390.88 Kbytes 页数：13 Pages

TI

德州仪器

丝印：258AY；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：258AM；Package：SOIC；DUAL OPERATIONAL AMPLIFIERS

FEATURES · Controlled Baseline – One Assembly/One Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Wide Supply Range: – Si

文件：390.88 Kbytes 页数：13 Pages

TI

德州仪器

丝印：258AM；Package：SOIC；DUAL OPERATIONAL AMPLIFIERS

FEATURES · Controlled Baseline – One Assembly/One Test Site, One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Wide Supply Range: – Si

文件：390.88 Kbytes 页数：13 Pages

TI

德州仪器