RM2520ES6

Marking：2520；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vds=25V,Id=1.1A Rds(on)6KV,HBM(Gate-SourceZenner) Highpowerandcurrenthandingcapabilty Leadfreeproducti

RM25N100DF

Marking：25N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=100V,ID=25A RDS(ON)25mΩ@VGS=10V RDS(ON)38mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation

RM25P150LD

Marking：25P150；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET

GeneralFeatures Vps=-150V,Ip=-25A Rd(on)

RM25P60D3

Marking：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature -60V,25A Rds(on)

RM25P60D3V

Marking：25P06Q；Package：PDFN3X3；P-Channel Enhancement Mosfet

Feature 60V-25A Rds(on)

RM25P60LD

Marking：25P60；Package：TO-252；P-Channel Power MOSFET

GeneralFeatures Vps=-60V,Ip=-25A Rds(on)

RM25P60LDV

Marking：25P60；Package：TO-252；P-Channel Power MOSFET

GeneralFeatures Vps=-60V,Ip=-25A Rds(on)

SCT025H120G3AG

Marking：25H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT025W120G3-4AG

Marking：25W120G3-4AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications

SCT025W120G3AG

Marking：25W120G3AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Maininverter(electrictraction) •DC/DC