P6SMB250A

Marking：250A；Transient Voltage Suppressors

GlassPassivatedJunctionTransientVoltageSuppressor VOLTAGE-6.8TO550Volts 400WattPeakPulsePower Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lo

P6SMB250A

Marking：250A；Package：DO-214AA；6.8 To 600V 600W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

P6SMB250CA

Marking：250C；Package：DO-214AA；6.8 To 600V 600W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

P6SMB250CA

Marking：250C；Transient Voltage Suppressors

GlassPassivatedJunctionTransientVoltageSuppressor VOLTAGE-6.8TO550Volts 400WattPeakPulsePower Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lo

P6SMB250CA

Marking：250C；Transient Voltage Suppressors

Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v

P6SMB250CA

Marking：250C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

eatures Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01%

PHYTVS250V4

Marking：250V4；Package：DFN-2；HYBRID TVS COMPONENT

Description ThePHYTVSxxxV4seriesisapatentpendinghybridstate-of-the-artsemiconductortechnologyintendedforAC powertransientprotection.Thisseriesisdesignedtoprotectcriticalindustrialandconsumerapplications,wherea reliableovervoltagesoluionwithlowerclampingvoltage

PSMN025-100HS

Marking：25RS10H；Package：LFPAK56D；N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •HighpeakdraincurrentIDM •CopperclipandflexibleLeads •HighoperatingjunctiontemperatureTj=175°C •Superiorreliability •Low

RI25N1200T7

Marking：25N1200；Package：TO-247；Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package.

Features Lowgatecharge,,Lowsaturationvoltage, Positivetemperaturecoefficient,RoHSproduct. Applications Generalpurposeinverter,Frequencyconverters, InductionHeating(IH),UninterruptedPowerSupply(UPS).

RI25N1200TP

Marking：25N1200；Package：TO-3P；Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Features Lowgatecharge,,Lowsaturationvoltage, Positivetemperaturecoefficient,RoHSproduct. Applications Generalpurposeinverter,Frequencyconverters, InductionHeating(IH),UninterruptedPowerSupply(UPS).