丝印：2302；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2302A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：685.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：2302A；Package：SOT-23；3A, 20V N-CHANNEL MOSFET

Feature Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness

文件：1.04281 Mbytes 页数：6 Pages

YFWDIODE

佑风微

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

30V N-Channel Enhancement MOS FET

文件：256.75 Kbytes 页数：3 Pages

FUMAN

富满微

High Current Toroid Inductors

文件：112.13 Kbytes 页数：1 Pages

Bourns

伯恩斯

High Current Toroid Inductors

文件：112.13 Kbytes 页数：1 Pages

Bourns

伯恩斯