30V N-Channel Enhancement MOS FET

文件：256.75 Kbytes 页数：3 Pages

FUMAN

富满微

丝印：2302B；Package：SOT-23；3A, 20V N-CHANNEL MOSFET

Feature Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness

文件：865.14 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：2302B；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：569.83 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 页数：2 Pages

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

文件：164.21 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

文件：257.32 Kbytes 页数：12 Pages

PHI

PHI