DTC123EE

Marking：22；Package：SOT-523；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

SOT-523BiasResistorTransistor NPNSiliconSurfaceMountTransistorwith MonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceand itsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsa singletransistorwit

DTC123EE3HZG

Marking：22；Package：SOT-416；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

DTC123EEB

Marking：22；Package：SOT-416FL；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

DTC123EKA

Marking：22；Package：SOT-346；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

DTC123EM

Marking：22；Package：SOT-723；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

DTC123EUA

Marking：22；Package：SOT-323；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

DTC123EUB

Marking：22；Package：SOT-323FL；NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistors

lFeatures 1)Built-InBiasingResistors,R1=R2=2.2kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigneasy.

ESD5V0DW

Marking：22；Package：SOT-363；Plastic-Encapsulate Diodes

DESCRIPTION DesignedtoprotectvoltagesensitiveelectroniccomponentsfromESDandothertransients. Excellentclampingcapability,lowleakage,lowcapacitance, andfastresponsetimeprovidebestinclassprotectionondesignsthatareexposedtoESD. Thecombinationofsmallsize,lowcap

LZ52C22W

Marking：22；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

PBSS4140V

Marking：22；Package：SOT666；40 V low VCEsat NPN transistor

FEATURES •300mWtotalpowerdissipation •Verysmall1.6mmx1.2mmx0.55mmultrathinpackage •Improvedthermalbehaviourduetoflatleads •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •ReducedrequiredPCBarea. AP