丝印：2115M-1.2G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-1.2G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-1.8G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-1.8G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-2.5G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-2.5G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-3.3G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115M-3.3G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

Features • Output Voltage Accuracy: ±1.5 • Output Current: 1A (Min.) • Fold-back Short Current Protection: 50mA • Low Dropout Voltage (3.3V): 450mV (Typ.) @ IOUT=1A • Stable with 4.7μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic • Excellent Line Regulation: 0.02/V (Typ.), 0.

文件：597.66 Kbytes 页数：19 Pages

DIODES

美台半导体

丝印：2115AQ；Package：TSSOP；TPS2115A-Q1 Auto-Switching Power Multiplexer

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 3: –40°C to 85°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4A • Two-Input One-Output Power

文件：830.46 Kbytes 页数：25 Pages

TI

德州仪器

丝印：2115AQ；Package：TSSOP；TPS2115A-Q1 Auto-Switching Power Multiplexer

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 3: –40°C to 85°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4A • Two-Input One-Output Power

文件：830.46 Kbytes 页数：25 Pages

TI

德州仪器