210N4LF7中文资料意法半导体数据手册PDF规格书

特性 Features

• AEC-Q101 qualified

• Among the lowest RDS(on) on the market

• Excellent FoM (figure of merit)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

• Wettable flank package

描述 Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.

Applications

• Switching applications