| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PolarHVHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe | IXYS IXYS Integrated Circuits Division | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
49400 |
正品授权货源可靠 |
询价 | |||
中性 |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON/安森美 |
2021+ |
TO-220F |
98000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
IXYS |
2023+ |
TO-3P |
8700 |
原装现货 |
询价 | ||
SKYGATE |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
INFINEON |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-220 |
91730 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-220 |
91730 |
询价 |
相关规格书
更多- 2100
- 2103
- 21143PD
- 21143-TD
- 21152-AB
- 215R3BUA33
- 22CV10AP-25
- 232CB
- 23D14
- 24128W6
- 24C01
- 24C01A
- 24C02
- 24C02M8
- 24C02W6
- 24C04
- 24C04A
- 24C04-S
- 24C08
- 24C08W6
- 24C128N
- 24C164
- 24C16N
- 24C16W6
- 24C256
- 24C32
- 24C32W6
- 24C64N
- 24C65
- 24LC01B
- 24LC01B_SN
- 24LC01B-I_SN
- 24LC02
- 24LC02B_P
- 24LC02B-I_P
- 24LC02BT_SN
- 24LC04
- 24LC04B_P
- 24LC04BT_SN
- 24LC08B
- 24LC08B_SN
- 24LC08BT_SN
- 24LC128
- 24LC128I_SN
- 24LC128T-I_SN
相关库存
更多- 2100IB
- 210895
- 21143TD
- 21152AB
- 215LT3UA31
- 215R3LASB41
- 22V10H-15JC_4
- 232CBE
- 23Z467SM
- 24256W6
- 24C016
- 24C01W6
- 24C02J
- 24C02N
- 24C03
- 24C046
- 24C04N
- 24C04W6
- 24C08N
- 24C128
- 24C16
- 24C16J
- 24C16-S
- 24C21
- 24C256N
- 24C32N
- 24C64
- 24C64W6
- 24C65_SM
- 24LC01B_P
- 24LC01B-I_P
- 24LC01BT_SN
- 24LC02B
- 24LC02B_SN
- 24LC02B-I_SN
- 24LC02BT-I_SN
- 24LC04B
- 24LC04B_SN
- 24LC08
- 24LC08B_P
- 24LC08B-I_SN
- 24LC08BT-I_SN
- 24LC128-I_P
- 24LC128-I_SN
- 24LC128T-I_STA37
