N-Channel enhancement mode power MOSFET

Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply

文件：302.65 Kbytes 页数：7 Pages

Fuji

富士通

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：254.59 Kbytes 页数：11 Pages

Infineon

英飞凌

Using novel field−stop IGBT technology

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Switching • AEC−Q101 Qualified to Automotive Requirements • These Devices are Pb−Free and are RoHS Compliant

文件：166.78 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Using novel field−stop IGBT technology

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Switching • AEC−Q101 Qualified to Automotive Requirements • These Devices are Pb−Free and are RoHS Compliant

文件：166.78 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel diode

文件：2.00644 Mbytes 页数：16 Pages

Infineon

英飞凌