丝印：20N06TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Features ● VDS =60V,ID =20A RDS(ON)

文件：3.83297 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：549.62 Kbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件：556.09 Kbytes 页数：7 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：86.42 Kbytes 页数：4 Pages

CET

华瑞