包装：散装 类别：标签，标志，护栏，标识 标志，铭牌，招贴 描述：B811 3.5X10 CAUTION RADIOACTIVE

Brady Corporation

包装：散装 类别：标签，标志，护栏，标识 标志，铭牌，招贴 描述：B811 3.5X10 CAUTION RADIOACTIVE

Brady Corporation

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold™ Metalization System

文件：39.54 Kbytes 页数：1 Pages

ASI

85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used

文件：47.28 Kbytes 页数：3 Pages

Ericsson

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