丝印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2010D107；Package：SOIC；Gas Gauge IC

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ➤ Integrate within a system or as a stand-

文件：332.28 Kbytes 页数：26 Pages

TI

德州仪器

丝印：2010D107；Package：SOIC；Gas Gauge IC

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ➤ Integrate within a system or as a stand-

文件：332.28 Kbytes 页数：26 Pages

TI

德州仪器

丝印：2010D107；Package：SOIC；Gas Gauge IC

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ➤ Integrate within a system or as a stand-

文件：332.28 Kbytes 页数：26 Pages

TI

德州仪器

丝印：2010D107；Package：SOIC；Gas Gauge IC

Features ➤ Conservative and repeatable measurement of available charge in rechargeable batteries ➤ Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ➤ Integrate within a system or as a stand-

文件：332.28 Kbytes 页数：26 Pages

TI

德州仪器

丝印：20100；Package：SOT669；N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charg

文件：744.9 Kbytes 页数：14 Pages

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