丝印：2007；Package：DFNWB2XX3-6L-C；Dual N-Channel MOSFET

文件：378.76 Kbytes 页数：4 Pages

FS

丝印：2007；Package：SC-59；P-Channel Enhancement Mode MOSFET

文件：641.12 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：2007；Package：DFN2030-6L；N-Channel Enhancement Mode Field Effect Transistor

文件：535.46 Kbytes 页数：6 Pages

YANGJIE

扬州扬杰电子

丝印：20073；Package：MSOP8E；2A, 1.3V–6.0V DDR Memory Termination Regulator AEC-Q100 Qualified

DESCRIPTION The MPQ20073 integrates the DDR memory termination regulator with the output voltage (VTT) and a buffered VTTREF outputs is a half of VREF. The VTT-LDO is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/low-external component count syst

文件：415.1 Kbytes 页数：12 Pages

MPSIND

美国芯源

丝印：20073；Package：MSOP8E；2A, 1.3V–6.0V DDR Memory Termination Regulator AEC-Q100 Qualified

DESCRIPTION The MPQ20073 integrates the DDR memory termination regulator with the output voltage (VTT) and a buffered VTTREF outputs is a half of VREF. The VTT-LDO is a 2A sink/source tracking termination regulator. It is specifically designed for low-cost/low-external component count syst

文件：415.1 Kbytes 页数：12 Pages

MPSIND

美国芯源

丝印：2007N；Package：SOT23-6L；N-Channel Enhancement Mode Power MOSFET

文件：350.71 Kbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

KLIPPON STB 4 MS FH M25 E90

Features: • Available in a wide variety of designs on customer request • Tested and approved according to DIN 4102-04 (E30, E60 and E90) - The exact details must be taken from the Declaration of Manufacturer • High quality through the use of proven basic products of the Klippon® brand

文件：364.13 Kbytes 页数：4 Pages

WEIDMULLER

魏德米勒

IEC Interconnection Cord with IEC Connector C13, V-Lock, straight

文件：380.7 Kbytes 页数：2 Pages

SCHURTER

硕特

10 BASE T ISOLATION MAGNETICS

文件：74.83 Kbytes 页数：2 Pages

XFMRS

XFMRS，Inc.

10 BASE T ISOLATION MAGNETICS

文件：74.83 Kbytes 页数：2 Pages

XFMRS

XFMRS，Inc.