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1SS226

SWITCHINGDIODE

FEATURES Lowforwardvoltage Fastreverserecoverytime Smalltotalcapacitance

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1SS226

SURFACEMOUNTFASTSWITCHINGDIODE

DualDiodeSeries FastSwitching SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

1SS226

SWITCHINGDIODESOT-23Plastic-EncapsulateTransistors

FEATURES *Lowforwardvoltage *Fastreverserecoverytime *Smalltotalcapacitance

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

1SS226

SWITCHINGDIODESULTRAHIGHSPEEDSWITCHING

AITSEMIAiT Semiconductor Inc.

创瑞科技AiT创瑞科技

1SS226

SwitchingDiodes

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

1SS226

SiliconEpitaxialPlanarSwitchingDiode

Features ●Smallpackage ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

1SS226

SwitchingDiodes

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

1SS226

Surfacemountswitchingdiode

FEATURES ●Fastswitching. ●Powerdissipation.PD:150mW(Tamb=25℃) ●Fastreverserecoverytime:trr=1.6ns(typ.) APPLICATIONS ●Highspeedswitchingapplication.

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1SS226

Surfacemountswitchingdiode

FEATURES ●Fastswitching. ●Powerdissipation.PD:150mW(Tamb=25℃) ●Fastreverserecoverytime:trr=1.6ns(typ.) APPLICATIONS ●Highspeedswitchingapplication.

DSK

Diode Semiconductor Korea

1SS226

UltraHighSpeedSwitchingApplication

Featrues ●Pb-FreePackageisAvailable. ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

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