1SS181

Plastic-EncapsulateDiodes

SWITCHINGDIODE Features: Lowon-statevoltagedrop; Shortreverserecoverytime Applications: High-speedswitchingcircuit.

1SS181

SiliconEpitaxialPlanarSwitchingDiode

1SS181

UltraHighSpeedSwitching

•Lowforwardvoltage:VF(3)=0.92V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=2.2pF(typ.) •WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

1SS181

150mWHighSpeedSwitchingDiodes80Volt

Features •LowForwardVoltage •LowLeakageCurrent •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) Max

1SS181

SurfaceMountSwitchingDiodes100mAMPERES80VOLTS

SWITCHINGDIODE100mAMPERES80VOLTS Features: *FastSwitchingSpeed *SurfaceMountPackageIdeallySuitedforAutomaticInsertion *HighConductance *ForGeneralPurposeSwitchingApplications

1SS181

Plastic-EncapsulatedDiodes

SWITCHINGDIODE FEATURES •Powerdissipation PD:150mW(Tamb=25℃) •ForwardCurrent IF:100mA •ReverseVoltage VR:80V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

1SS181

SOT-23SWITCHINGDIODE

1SS181

SOT-23Plastic-EncapsulateDiodes

SwitchingDiodes FEATURES •Lowforwardvoltage •Fastreverserecoverytime

1SS181

SILICONEPITAXIALPLANARDIODE

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance Applications •Ultrahighspeedswitchingapplication

1SS181

ULTRAHIGHSPEEDSWITCHINGAPPLICATION

Features •SmallPackage •Lowforwardvoltage:VF(3)=0.92V(Typ.) •FastReverseRecoveryTime:trr=1.6ns(Typ.) •SmallTotalCapacitance:CT=2.2pF(Typ.)