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1SS181

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS)

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.92V(Typ.) ●Fastreverserecoverytime:trr=1.6ns(Typ.) ●Smalltotalcapacitance:CT=2.2pF(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

1SS181

UltraHighSpeedSwitchingApplication

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

1SS181

Surfacemountswitchingdiode

FEATURES •Lowforwardvoltage VF(3)=0.92V(typ). •Fastswitching. •Fastreverserecoverytime:trr=1.6ns(typ) APPLICATIONS •Highspeedswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1SS181

ULTRAHIGHSPEEDSWITCHINGAPPLICATION

Features •SmallPackage •Lowforwardvoltage:VF(3)=0.92V(Typ.) •FastReverseRecoveryTime:trr=1.6ns(Typ.) •SmallTotalCapacitance:CT=2.2pF(Typ.)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

1SS181

SILICONEPITAXIALPLANARDIODE

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance Applications •Ultrahighspeedswitchingapplication

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1SS181

SOT-23Plastic-EncapsulateDiodes

SwitchingDiodes FEATURES •Lowforwardvoltage •Fastreverserecoverytime

TGS

Tiger Electronic Co.,Ltd

1SS181

SOT-23SWITCHINGDIODE

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

1SS181

Plastic-EncapsulatedDiodes

SWITCHINGDIODE FEATURES •Powerdissipation PD:150mW(Tamb=25℃) •ForwardCurrent IF:100mA •ReverseVoltage VR:80V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

1SS181

SurfaceMountSwitchingDiodes100mAMPERES80VOLTS

SWITCHINGDIODE100mAMPERES80VOLTS Features: *FastSwitchingSpeed *SurfaceMountPackageIdeallySuitedforAutomaticInsertion *HighConductance *ForGeneralPurposeSwitchingApplications

WEITRONWEITRON

威堂電子科技

1SS181

150mWHighSpeedSwitchingDiodes80Volt

Features •LowForwardVoltage •LowLeakageCurrent •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) Max

MCCMicro Commercial Components

美微科美微科半导体公司

1SS181

UltraHighSpeedSwitching

•Lowforwardvoltage:VF(3)=0.92V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=2.2pF(typ.) •WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

1SS181

SiliconEpitaxialPlanarSwitchingDiode

BYTESONICBytesonic Electronics Co., Ltd.

百特森深圳市百特森电子有限公司

1SS181

Plastic-EncapsulateDiodes

SWITCHINGDIODE Features: Lowon-statevoltagedrop; Shortreverserecoverytime Applications: High-speedswitchingcircuit.

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

1SS181

SOT-23Plastic-EncapsulateDiodes

SwitchingDiodes Features ●Lowforwardvoltage ●Fastreverserecoverytime Applications ●Extremefastswitches

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

1SS181

Plastic-EncapsulateDiodes

FEATURES •Lowforwardvoltage:VF(3)=0.92V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

1SS181

SwitchingDiodes

SwitchingDiodes FEATURES •Lowforwardvoltage •Fastreverserecoverytime

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

1SS181

SWITCHINGDIODE

FEATURES •PowerdissipationPD(Ta=25℃)225mW •ForwardCurrentIF=200mA •ReverseVoltageVR=80V •JunctionandStorageTemperature TJ,Tstg-55to+150℃

GSMEGuilin Strong Micro-Electronics Co., Ltd.

Guilin Strong Micro-Electronics Co., Ltd.

1SS181

SOT-23Plastic-EncapsulateDiodes

SWITCHINGDIODE FEATURES •Powerdissipation PD:150mW(Tamb=25℃) •ForwardCurrent IF:100mA •ReverseVoltage VR:80V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明阳国际贸易广州市明阳国际贸易有限公司

1SS181

SOT-23Plastic-EncapsulateDIODE

Features Powerdissipation PD:150mW(Tamb=25°C) ForwardCurrent IF:100mA ReverseVoltage VR:80V Operatingandstoragejunctiontemperaturerange Tj,Tsta:-55°Cto+150°C

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

1SS181

SWITCHINGDIODES

Plastic-EncapsulateDiodes FEATURES •Lowforwardvoltage:VF(3)=0.92V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.)

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

供应商型号品牌批号封装库存备注价格
2015+
4000
公司现货库存
询价
2015+
4000
公司现货库存
询价
TOSHIBA
08+pb-Free
SOT23
250000
询价
CJ/长电
23+
SOT-23
90000
只做原厂渠道价格优势可提供技术支持
询价
TOSHIBA
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
TOS
04+
8183
进口原装-真实库存-价实
询价
TOSHIBA
58209
16余年资质 绝对原盒原盘 更多数量
询价
TOSHIBA/东芝
24+
NA
990000
明嘉莱只做原装正品现货
询价
TOSHIBA
23+
null
7000
专注配单,只做原装进口现货
询价
TOSHIBA
23+
null
7000
专注配单,只做原装进口现货
询价
更多1SS181(A3供应商 更新时间2024-5-4 16:20:00