1SMB5932-AU

SURFACE MOUNT SILICON ZENER DIODE

VOLTAGE6.8to51VoltsPOWER1.5Watts FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLabora

1SMB5932-AU

齐纳二极管;

1SMB5932-AU_R1_000A1

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：SILICON ZENER DIODE

1SMB5932B

SiliconPlanarZenerDiodes

FEATURES ♦Totalpowerdissipation:Max.3W. ♦Widezenerreversevoltagerange3.3Vto200V. ♦plasticpackagesuitableforsurfacemounteddesign. ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ♦Case:DO-214AA/SMB ♦Terminals:SolderableperMIL-STD-750,Method

1SMB5932B

3.0WSURFACEMOUNTPOWERZENERDIODE

Features •3.0WPowerDissipation •IdeallySuitedforAutomatedAssembly •3.3V-200VNominalZenerVoltageRange •StandardVZToleranceis±5 •ESDRatingofClass3(>16kV)perHumanBodyModel •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D

1SMB5932B

3.0WattsSurfaceMountZenerDiodes

Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Flathandlingsurfaceforaccurateplacement ●Lowleakagecurrent

1SMB5932B

SURFACEMOUNTZENERDIODE

Features ◆Smallplasticpackagesuitableforsurfacemounteddesign.

1SMB5932B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

3.3V-200V1.9mA-113.6mA FEATURES •ZenerVoltageRange−3.3Vto200V •ESDRatingofClass3(>16kV)perHumanBodyModel •FlatHandlingSurfaceforAccuratePlacement •PackageDesignforTopSideorBottomCircuitBoardMounting •Pb−FreePackagesareAvailable

1SMB5932B

3.0WattsSurfaceMountZenerDiodes

Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Flathandlingsurfaceforaccurateplacement ●Lowleakagecurrent

1SMB5932B

3.0WattsSurfaceMountTypeSiliconGlassPassivatedZenerDiodes

Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Flathandlingsurfaceforaccurateplacement ●Lowleakagecurrent