丝印：1N7；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：1N7；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：1N7512；Package：PG-WSON-6-1；advanced single-channel driver

文件：1.16916 Mbytes 页数：28 Pages

Infineon

英飞凌

丝印：1N7512；Package：PG-WSON-6-1；EiceDRIVER?

文件：1.16916 Mbytes 页数：28 Pages

Infineon

英飞凌

丝印：1N72；Package：SOT-23-THIN；4-V to 40-V, 1-A Step-Down Converter With High Efficiency Eco-mode

文件：609.78 Kbytes 页数：23 Pages

TI

德州仪器

丝印：1N72；Package：SOT-23-THIN；4-V to 40-V, 1-A Step-Down Converter With High Efficiency Eco-mode

文件：609.78 Kbytes 页数：23 Pages

TI

德州仪器

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：2.79285 Mbytes 页数：78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1.2 Amps, 700 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

文件：217.42 Kbytes 页数：8 Pages

UTC

友顺

ZENER DIODES

ZENER DIODES American Power Devices offers a complete line of quality industrial, commercial and military silicon regulators and temperature-compensated references ranging from 200mW to 1W in DO-7, DO-35 and DO-41 cases.

文件：170.79 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Dual Schottky Power Rectifier 35 Amp, 150 Volt

DESCRIPTION This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability applications. They are hermetically sealed in a common cathode configuration offering very fast switching characteristics compared to fast or ultrafast rectifiers. FEATURES • JEDEC

文件：485.83 Kbytes 页数：5 Pages

Microsemi

美高森美