1N6819R中文资料美高森美数据手册PDF规格书
1N6819R规格书详情
Features
● Tungsten schottky barrier
● Oxide passivated structure for very low leakage currents
● Guard ring protection for increased reverse energy capability
● Epitaxial structure minimizes forward voltage drop
● Hermetically sealed, low profile ceramic surface mount power package
● Low package inductance
● Very low thermal resistance
● Available as standard polarity (strap is anode: 1N6819) and reverse
polarity (strap is cathode: 1N6819R)
产品属性
- 型号：
1N6819R
- 制造商：
MICROSEMI
- 制造商全称：
Microsemi Corporation
- 功能描述：
LOW LEAKAGE CURRENT SCHOTTKY DIODE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VMI |
2022+ |
DIP |
8000 |
只做原装支持实单,有单必成。 |
询价 | ||
VMI |
24+ |
N/A |
8000 |
一级代理现货、保证进口原装正品假一罚十价格合理 |
询价 | ||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 | |||
Microchip Technology |
25+ |
ThinKey?4 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VMI |
23+ |
DIP |
12000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
VMI |
2023+ |
DIP |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
MICROSEMI |
1809+ |
SMD |
26 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
