首页 >1N6100JTXVMSD*L>规格书列表
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MONOLITHICAIRISOLATEDDIODEARRAY DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINpackageforuseassteeringdiodesprotectinguptosevenI/OportsfromESD,EFT,orsurgebydirectingthemeithertothepositivesideofthepowers | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
IsolatedDiodeArraywithHiRelMQ,MX,MV,andMSPScreeningOptions | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DIODEARRAYCIRCUITS DESCRIPTION TheSG6100/SG6511andSG6101/SG6510diodearraysaremonolithic,highbreakdown,fastswitchingspeeddiodearrays.TheSG6100/SG6511isconfiguredwith7straightthroughdiodes,whiletheSG6101/SG6510has8straightthroughdiodes. FEATURES •75Vminimumbreakdownvoltage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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