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1N6100

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINpackageforuseassteeringdiodesprotectinguptosevenI/OportsfromESD,EFT,orsurgebydirectingthemeithertothepositivesideofthepowers

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6100

IsolatedDiodeArraywithHiRelMQ,MX,MV,andMSPScreeningOptions

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6100

DIODEARRAYCIRCUITS

DESCRIPTION TheSG6100/SG6511andSG6101/SG6510diodearraysaremonolithic,highbreakdown,fastswitchingspeeddiodearrays.TheSG6100/SG6511isconfiguredwith7straightthroughdiodes,whiletheSG6101/SG6510has8straightthroughdiodes. FEATURES •75Vminimumbreakdownvoltage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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