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1N60G-TMS-T

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

1N60G-TND-R

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

1N60H

1A竊?00VN-CHANNELMOSFET

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

1N60-KW

N-CHANNELENHANCEMENT

UTCUnisonic Technologies

友顺友顺科技股份有限公司

1N60L-TMS-T

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

1N60L-TND-R

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

1N60P

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60P

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60P

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

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