1N60中文资料1.2A, 600V N-CHANNEL POWER MOSFET数据手册UTC规格书

描述 Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

特性 Features

• VDS = 600V
• ID = 1.2A
• RDS(ON) =11.5Ω@VGS = 10V.
• Ultra Low gate charge (typical 5.0nC)
• Low reverse transfer capacitance (CRSS = typical 3.0 pF)
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness