首页 >1N5822JANTX-HSD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3ASCHOTTKYBARRIERRECTIFIERS FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE | FRONTIER Frontier Electronics | FRONTIER | ||
SchottkyBarrierRectifiers
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
VOLTAGERANGE20-40VoltsCURRENT3.0Amperes | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERDIODES FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
3.0ASCHOTTKYBARRIERRECTIFIERS | DIODESDiodes Incorporated 美台半导体 | DIODES |
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