| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AxialLeadSchottkyDiode | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SHUNYEShanghai Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SHUNYE | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | DSK Diode Semiconductor Korea | DSK |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
23+ |
DO-41 |
7750 |
全新原装优势 |
询价 | ||
ST(先科) |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
DISCRETE |
1000 |
ON |
23000 |
询价 | |||
ONSemiconductor |
24+ |
Axial |
262 |
询价 | |||
ON |
24+/25+ |
DO-214 |
2500 |
原装正品现货库存价优 |
询价 | ||
ON |
24+ |
N/A |
5642 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ON |
2018+ |
DO-41 |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
ON |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
ON |
25+23+ |
DO-41 |
15646 |
绝对原装正品全新进口深圳现货 |
询价 |
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