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1N5819A-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5819-B

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819-B

1.0ASCHOTTKYBARRIERRECTIFIER

DIODESDiodes Incorporated

美台半导体

1N5819-B

GuardRingDieConstructionforTransientProtection

DIODESDiodes Incorporated

美台半导体

1N5819B-G

SchottkyBarrierRectifiers

Features -Epitaxialconstruction. -Lowforwardvoltagedrop. -Metal-Semiconductorjunctionwithguardring. -Highcurrentcapability. -Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5819-BP

Halogenfreeavailableuponrequestbyaddingsuffix

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1N5819-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

1N5819FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

1N5819-FP

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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