Schottky Barrier Rectifiers

Features - Epitaxial construction. - Low forward voltage drop. - Metal-Semiconductor junction with guard ring. - High current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件：77.12 Kbytes 页数：3 Pages

COMCHIP

典琦

Schottky Rectifier, 1.0 A

DESCRIPTION The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded outline

文件：90.3 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features: ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec

文件：241.91 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

SCHOTTKY BARRIER DIODE

文件：471.87 Kbytes 页数：3 Pages

YFWDIODE

佑风微